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edition 1.0 nov. 2010 1 c-band internally matched fet ELM5964-7PS features high output power: p1db=39.0dbm (typ.) high gain: g1db=11.0db (typ.) high pae: add =36% (typ.) broad band: 5.9 to 6.4ghz internally matched plastic package for smt applications description the ELM5964-7PS is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain. absolute maximum rating (case temperature tc=25 deg.c) item symbol rating unit drain-source voltage v ds 15 v gate-source voltage v gs -5 v total power dissipation p t 42.8 w storage temperature t stg -40 to +125 deg.c channel temperature t ch 175 deg.c recommended operating condition (case temperature tc=25 deg.c) item symbol condition limit unit dc input voltage v ds <10 v forward gate current i gf r g =100 ohm <+16 ma reverse gate current i gr r g =100 ohm >-2.2 ma channel temperature t ch 155 deg.c electrical characteristics (case temperature tc=25 deg.c) item symbol condition limit unit min. typ. max. drain current i dss v ds =5v, v gs =0v - 3400 5200 ma trans conductance gm v ds =5v, i ds =2200ma - 3400 - ms pinch-off voltage v p v ds =5v, i ds =170ma -0.5 -1.5 -3.0 v gage-source breakdown voltage v gso i gs =170ua -5.0 - - v output power at 1db g.c.p. p 1db v ds =10v i ds(dc) =2200ma(typ.) f=5.9 to 6.4 ghz 38.0 39.0 - dbm power gain at 1db g.c.p. g 1db 9.5 11.0 - db drain current i dsr - 2200 2600 ma power added efficiency add -36- % gain flatness ? ? ? ? g --1.2 db 3 rd order inter modulation distortion im 3 f=6.4ghz ? f=10mhz, 2-tone test pout=28.0dbm (s.c.l) -40 -45 - dbc r th r th channel to case - 2.5 3.0 deg.c/w ? ? ? ? t ch ? ? ? ? t ch 10v x i dsr x r th --80 deg.c
edition 1.0 nov. 2010 2 c-band internally matched fet ELM5964-7PS note z this device will not be delivered with test data but tested pass/fail 100% against dc and rf specifications. z no liquid cleaning process is suitable for this device. (including de-ionized water or solvent) case style: i2c esd class 3 a 4000 to 8000v msl 2a 4 weeks after open the package note : based on jedec jesd22-a114 (c=100pf, r=1500ohm) ordering information model type moq mou packing style ELM5964-7PS 15pcs 15pcs 15pcs tray ELM5964-7PSt 500pcs 500pcs 24mm width tape (500pcs/reel) *moq stands for minimum order quantity. *mou stands for minimum order unit size.
edition 1.0 nov. 2010 3 c-band internally matched fet ELM5964-7PS 0 10 20 30 40 50 0 50 100 150 200 case temperature [deg.c] total power dissipation [w] power derating curve 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] 5.9 ghz 6.15 ghz 6.4 ghz input power vs. output power, power added efficiency v ds =10v, i ds(dc) =2200ma output power vs. frequency v ds =10v, i ds(dc) =2200ma imd vs. output power v ds =10v, i ds(dc) =2200ma 28 30 32 34 36 38 40 42 5.7 5.9 6.1 6.3 6.5 frequency [ghz] output power [dbm] 20 dbm 22 dbm 24 dbm 26 dbm 28 dbm 30 dbm p1db -70 -65 -60 -55 -50 -45 -40 -35 -30 18 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] 5.9 ghz 6.15 ghz 6.4 ghz im3 im5
edition 1.0 nov. 2010 4 c-band internally matched fet ELM5964-7PS input power vs. output power, power added efficiency by drain voltage i ds(dc) =2200ma @5.9ghz input power vs. output power, power added efficiency by drain voltage i ds(dc) =2200ma @6.15ghz input power vs. output power, power added efficiency by drain voltage i ds(dc) =2200ma @6.4ghz 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] 8 v 9 v 10 v 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] 8 v 9 v 10 v 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] 8 v 9 v 10 v
edition 1.0 nov. 2010 5 c-band internally matched fet ELM5964-7PS 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] 1400 ma 1800 ma 2200 ma 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] 1400 ma 1800 ma 2200 ma 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] 1400 ma 1800 ma 2200 ma input power vs. output power, power added efficiency by quiescent drain current vds=10v @5.9ghz input power vs. output power, power added efficiency by quiescent drain current vds=10v @6.15ghz input power vs. output power, power added efficiency by quiescent drain current vds=10v @6.4ghz
edition 1.0 nov. 2010 6 c-band internally matched fet ELM5964-7PS input power vs. output power, power added efficiency by case temperature v ds =10v i ds(dc) =2200ma @5.9ghz input power vs. output power, power added efficiency by case temperature v ds =10v i ds(dc) =2200ma @6.15ghz input power vs. output power, power added efficiency by case temperature v ds =10v i ds(dc) =2200ma @6.4ghz 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] -40 deg.c 20 deg.c 80 deg.c 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] -40 deg.c 20 deg.c 80 deg.c 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 power added efficiency [%] -40 deg.c 20 deg.c 80 deg.c
edition 1.0 nov. 2010 7 c-band internally matched fet ELM5964-7PS imd performance vs. output power by drain voltage i ds(dc) =2200ma @5.9ghz imd performance vs. output power by drain voltage i ds(dc) =2200ma @6.15ghz imd performance vs. output power by drain voltage i ds(dc) =2200ma @6.4ghz -70 -65 -60 -55 -50 -45 -40 -35 -30 18 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] 8 v 9 v 10 v im3 im5 -70 -65 -60 -55 -50 -45 -40 -35 -30 18 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] 8 v 9 v 10 v im3 im5 -70 -65 -60 -55 -50 -45 -40 -35 -30 18 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] 8 v 9 v 10 v im3 im5
edition 1.0 nov. 2010 8 c-band internally matched fet ELM5964-7PS imd performance vs. output power by quiescent drain current v ds =10v @5.9ghz imd performance vs. output power by quiescent drain current v ds =10v @6.15ghz imd performance vs. output power by quiescent drain current v ds =10v @6.4ghz -70 -65 -60 -55 -50 -45 -40 -35 -30 18 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] 1400 ma 1800 ma 2200 ma im3 im5 -70 -70 -70 -70 -65 -65 -65 -65 -60 -60 -60 -60 -55 -55 -55 -55 -50 -50 -50 -50 -45 -45 -45 -45 -40 -40 -40 -40 -35 -35 -35 -35 -30 -30 -30 -30 18 18 18 18 20 20 20 20 22 22 22 22 24 24 24 24 26 26 26 26 28 28 28 28 30 30 30 30 32 32 32 32 output power [dbm] s.c.l. imd [dbc] 1400 ma 1400 ma 1400 ma 1400 ma 1800 ma 1800 ma 1800 ma 1800 ma 2200 ma 2200 ma 2200 ma 2200 ma im3 im5 -70 -70 -70 -70 -65 -65 -65 -65 -60 -60 -60 -60 -55 -55 -55 -55 -50 -50 -50 -50 -45 -45 -45 -45 -40 -40 -40 -40 -35 -35 -35 -35 -30 -30 -30 -30 18 18 18 18 20 20 20 20 22 22 22 22 24 24 24 24 26 26 26 26 28 28 28 28 30 30 30 30 32 32 32 32 output power [dbm] s.c.l. imd [dbc] 1400 ma 1400 ma 1400 ma 1400 ma 1800 ma 1800 ma 1800 ma 1800 ma 2200 ma 2200 ma 2200 ma 2200 ma im3 im5
edition 1.0 nov. 2010 9 c-band internally matched fet ELM5964-7PS imd performance vs. output power by case temperature v ds =10v i ds(dc) =2200ma @5.9ghz imd performance vs. output power by case temperature v ds =10v i ds(dc) =2200ma @6.15ghz imd performance vs. output power by case temperature v ds =10v i ds(dc) =2200ma @6.4ghz - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 1 8 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] -40 deg.c 20 deg.c 80 deg.c im3 im5 -70 -65 -60 -55 -50 -45 -40 -35 -30 18 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] -40 deg.c 20 deg.c 80 deg.c im3 im5 - 70 - 65 - 60 - 55 - 50 - 45 - 40 - 35 - 30 18 20 22 24 26 28 30 32 output power [dbm] s.c.l. imd [dbc] -40 deg.c 20 deg.c 80 deg.c im3 im5
edition 1.0 nov. 2010 10 c-band internally matched fet ELM5964-7PS ? s-parameter s11 s22 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 6.6ghz 5.7ghz 50 25 100 250 6.1ghz 5.7ghz 6.6ghz 6.1ghz s21 s12 180 0 -90 +90 0.1 6.6ghz 5.7ghz scale for |s 21 | 1 2 3 4 scale for |s 12 | 0.05 6.6ghz 6.1ghz 5.7ghz 6.1ghz 5 s-parameter reference plane drain gate frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 5700 0.618 155.6 3.778 -57.4 0.029 -25.9 0.42 152.6 5800 0.607 139.7 3.782 -73.6 0.029 -43.4 0.442 138.1 5900 0.589 124.9 3.773 -89.3 0.031 -59.7 0.463 126 6000 0.582 110 3.789 -104.3 0.035 -78.1 0.486 114.9 6100 0.567 92.6 3.953 -120.1 0.037 -103.2 0.494 103.1 6200 0.519 74.3 4.12 -137.4 0.035 -122.3 0.467 93.6 6300 0.467 54 4.297 -155.9 0.036 -138.8 0.434 85.6 6400 0.413 28 4.485 -175.7 0.038 -157.7 0.384 78.2 6500 0.367 -8.1 4.678 162 0.04 -179.5 0.307 73.2 6600 0.374 -54.7 4.72 137.1 0.04 156 0.209 79.3
edition 1.0 nov. 2010 11 c-band internally matched fet ELM5964-7PS package out line co planarity pin assignments 1 : nc 2 : gate 3 : nc 4 : nc 5 : drain 6 : nc 7 : source 1 2 3 4 5 6 7
edition 1.0 nov. 2010 12 c-band internally matched fet ELM5964-7PS pcb pads and solder-resist pattern
edition 1.0 nov. 2010 13 c-band internally matched fet ELM5964-7PS marking and tape/reel configuration
edition 1.0 nov. 2010 14 c-band internally matched fet ELM5964-7PS 200 220 (4) (1) 260 250 rt (2) (3) 140 time temperature (deg.c) z mounting instructions for package for lead-free solder ? mounting condition for soldering, lead-free solder (sn-3.0ag-0.5cu)*1 which is no liquid cleaning type shall be used. 1. the example solder is a tin-rich alloy with 3.0% silver and 0.5% copper, often called sn 96 for its approximate tin content. 2. a rosin type flux with chlorine content of 0.2% or less shall be used. the rosin flux with low halogen content is recommended. when soldering, use the following time/ temperature profile with any of the methods listed for acceptable solder joints. 3. make sure the devices have been properly prepared with flux prior soldering. *reflow soldering method (infrared reflow / heat circulation reflow / hot plate reflow); limit solder to 3 reflow cycles because resin is used in the modules manufacturing process. excessive reflow will effect the resin resulting in a potential failure or latent defect. the recommended reflow temperature profile is shown below. the temperature of the reflow profile must be measured at the device lead. z reflow temperature profile and condition: (1). temperature rise: 3 deg.c/seconds. (2). preheating: 150 - 200 deg.c, 60 - 180seconds. (3). main heating: 220 deg.c, 60 seconds max. (4). main heating: 260 deg.c max., more than 250 deg.c, 20 - 40 seconds max. * measurement point: device heat-sink (source pin). 1. the above-recommended conditions were confirmed using the manufacturer?s equipment and materials. however, when soldering these products, the soldering condition should be verified by customer using their own particular equipment and materials. z cleaning avoid washing of the device after soldering by reflow method due to the risk of liquid absorption by the resin used in this part.
edition 1.0 nov. 2010 15 c-band internally matched fet ELM5964-7PS 1.e+03 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 0 102030405060708090100 typical ambient temperature (deg.c) time to failure at failure rate of 0.1%(hours ) 50% 60% 70% 80% 90% relative humidity 10 years 1.e+03 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 0 102030405060708090100 typical ambient temperature (deg.c) mttf ( hours) 50% 60% 70% 80% 90% relative humidity humidity lifetime for elmxxxx-7pst the following graph shows the effect of moisture on lifetime (moisture resistance) for the elmxxxx-7pst . each graph indicates the mttf and failure rate prediction (confidential level = 90 %) which calculated from the results of highly accelerated temperature and humidity stress test (hast). representative of device type : elm7179-7pst subject of device type : elmxxxx-7pst field environmental conditions for operation if the elmxxxx-7pst is installed in a non-hermetic environment, please refer to the following recommendations and notes for design with, and assembly and use of our products. note 1. when drain current cuts off, it should be cut off by drain bias, and not cut off by gate bias only. the humidity lifetime becomes shorter in case of the gate-only cut off operation due to electric field strength interacting with humidity. note 2. elmxxxx-7pst should be used under the environment conditions of no dew condensation. these plots do not apply in the case of liquid absorbed into the resin, whether applied to the part in assembly or as condensate in the application.
edition 1.0 nov. 2010 16 c-band internally matched fet ELM5964-7PS for further information please contact: http://global-sei.com/electro-optic/about/office.html caution this product contains gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures.

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